13007A PDF

General Description. This Device is designed for high voltage, High speed. Absolute Maximum Ratings. Test Conditions. Collector-Emitter Voltage.

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General Description. This Device is designed for high voltage, High speed. Absolute Maximum Ratings. Test Conditions. Collector-Emitter Voltage. Emitter-Base Voltage.

Collector Current. Collector pulse Current. Base Current. Base Peak Current. Operation Junction Temperature. Storage Temperature. Tc: Case temperature good cooling Ta: Ambient temperature without heat sink.

Thermal Characteristics. V alue. Thermal Resistance Junction to Case. Thermal Resistance Junction to Ambient. Jan Copyright WinSemi Semiconductor Co. CEO sus. Collector-Emitter Breakdown Voltage. CE sat. Collector-Emitter Sa turation Voltage. BE sat. Base-Emitter Satu ration Voltage. Collector-Base Cutoff Current. Current Gain. Resistive Load. Storage Time. Inductive Load. Safe Operation Area. Resistive Load Switching Test Circuit. TO Package Dimension.

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13007A.pdf

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EARTH4ENERGY MANUAL PDF

10PCS MJE13007A 13007 13007A TO-220 new and original SILICON NPN SWITCHING TRANSISTOR IC NEW

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