PD - This benefit,. The SOT package is designed for surface-mount. Its unique package design allows for easy automatic pick-. Power dissipation. Absolute Maximum Ratings.
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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Its unique package design allows for easy automatic pick- and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1. PD - This benefit,. The SOT package is designed for surface-mount. Its unique package design allows for easy automatic pick-.
Power dissipation. Absolute Maximum Ratings. Gate-to-Source Voltage. Junction and Storage Temperature Range. Thermal Resistance.
No Preview Available! R DS on. V GS th. I DSS. I GSS. C iss. C oss. C rss. Static Drain-to-Source On-Resistance. Gate Threshold Voltage. Forward Transconductance. Drain-to-Source Leakage Current. Gate-to-Source Forward Leakage.
Gate-to-Source Reverse Leakage. Total Gate Charge. Gate-to-Source Charge. Gate-to-Drain "Miller" Charge. Turn-On Delay Time. Rise Time.
Turn-Off Delay Time. Fall Time. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Source-Drain Ratings and Characteristics. I S Continuous Source Current. Body Diode. Q rr Reverse RecoveryCharge. A integral reverse. See fig. See Figure International Rectifier Electronic Components Datasheet.